GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.

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Galyum arsenür GaAs, zincblende (çinko sülfür) kristal yapılı bir III-V doğrudan bant aralıklı yarı iletkendir. Mikrodalga entegre devrelerin, kızılötesi LED 'lerin ve güneş pillerinin üretiminde kullanılır.

Basic Parameters at 300 K Band structure and carrier concentration Basic Parameters of Band Structure and carrier concentration Temperature Dependences Energy Gap Narrowing at High Doping Levels Effective Masses and Density of States Donors and Acceptors Electrical Properties Basic Parameters of Electrical Properties Mobility and Hall Effect Transport Properties in High Electric Fields Impact ...

A GaAs semiconductor is defined as a compound of gallium and arsenic that belongs to the III-V group of semiconductors. GaAs has a direct band gap of 1.424 eV at 300 K and a zinc blend crystal structure.

GaAs is one of the most popular materials for electronic components and devices due to its superior properties. It has an increased electron mobility, which allows it to transmit signals at higher speeds than other materials.

At 300 K For λ~2 µm α =6·10 -18 no (cm -1) (no - in cm -1) For λ > 4µm and 10 17 <no <10 18 cm -3α ≈ 7.5·10 -20no·λ3 (cm -1) (no - in cm -3, λ - µm)

It is determined by excitation of deep-level impurities which are always introduced into GaAs crystal during its growth and attaining semi-insulating state. Besides gallium arsenide can exhibit linear electro-optic effect (Pockels effect).

Gallium arsenide (GaAs) contains an atom of Gallium and another atom of Arsenide. Its use is found in electronics, such as in the manufacturing of semiconductors.

GaAs has several advantages over silicon for operation in the microwave region-primarily, higher mobility and saturated drift velocity and the capability to produce devices on a semi-insulating substrate.